Fraunhofer Institute for Applied Solid State Physics has come up with a torch that uses Gallium nitride transistors in its LED lamp. By boosting the efficiency of the GaN driver to 86 percent – better than its silicon equivalent - the Institute's scientists have been able to more than double the output to to 2090 lumens, compared to 1000 lumens in one based on silicon.
As around 20% of electricity is consumed in providing lighting, this advance could lead to significant energy savings. With Incandescent light bulbs are now banned in the EU and halogen- based light bulbs on their way out too in the future, GaN based LEDs could well be the solution to meeting increasing demands for lighting whilst reducing energy consumption.
For more information see the Institute's press release.
Also, he researchers will be showcasing a demonstrator of their retrofit LED from April 7-11 at the Hannover Messe, where they can be found at the joint Fraunhofer booth in Hall 2, Booth D18.